? semiconductor components industries, llc, 2010 december, 2010 ? rev. 2 1 publication order number: np0640samc/d npmc series ultra low capacitance tspd the npmc series of low capacitance thyristor surge protection devices (tspd) protect sensitive electronic equipment from transient overvoltage conditions. due to their ultra low off ? state capacitance (c o ), they offer minimal signal distortion for high speed equipment such as dsl and t1/e1 circuits. the low nominal of fstate capacitance translates into the extremely low differential capacitance offering superb linearity with applied voltage or frequency. the npmc series helps designers to comply with the various regulatory standards and recommendations including: gr ? 1089 ? core, iec 61000 ? 4 ? 5, itu k.20/k.21/k.45, iec 60950, tia ? 968 ? a, fcc part 68, en 60950, ul 1950. features ? ultra low ? micro capacitance ? low leakage (transparent) ? high surge current capabilities ? precise turn on voltages ? low voltage overshoot ? these are pb ? free devices typical applications ? xdsl central office and customer premise ? t1/e1 ? other broadband high speed data transmission equipment electrical parameters device v drm v (bo) v t i drm i (bo) i t i h v v v a ma a ma np0640sxmct3g 58 77 4 5 800 2.2 150 np0720sxmct3g 65 88 4 5 800 2.2 150 np0900sxmct3g 75 98 4 5 800 2.2 150 np1100sxmct3g 90 130 4 5 800 2.2 150 np1300sxmct3g 120 160 4 5 800 2.2 150 np1500sxmct3g 140 180 4 5 800 2.2 150 np1800sxmct3g 170 220 4 5 800 2.2 150 np2100sxmct3g 180 240 4 5 800 2.2 150 np2300sxmct3g 190 260 4 5 800 2.2 150 np2600sxmct3g 220 300 4 5 800 2.2 150 np3100sxmct3g 275 350 4 5 800 2.2 150 np3500sxmct3g 320 400 4 5 800 2.2 150 g = indicates leadfree, rohs compliant * recognized components ultra low capacitance bidirectional surface mount thyristor 64 ? 350 volts tr smb jedec do ? 214aa case 403c a = assembly location y = year ww = work week xxxx = specific device code (npxxx0sxmc) = pb ? free package (note: microdot may be in either location) marking diagram ayww xxxxm http://onsemi.com device package shipping ? ordering information npxxx0sxmct3g smb (pb ? free) 2500 tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d.
npmc series http://onsemi.com 2 tel ? com standards specification waveform x = series ratings unit voltage s) current s) a b c gr ? 1089 ? core 2x10 2x10 150 250 500 a(pk) tia ? 968 ? a 10x160 10x160 90 150 200 gr ? 1089 ? core 10x360 10x360 75 125 175 tia ? 968 ? a 10x560 10x560 50 100 150 itu ? t k.20/21 10x700 5x310 75 100 200 gr ? 1089 ? core 10x1000 10x1000 50 80 100 surge ratings characteristics symbol a b c unit nominal pulse surge short circuit current non ? repetitive double exponential decay waveform (notes 1, 2 and 3) 2 x 10 sec 8 x 20 sec 10 x 160 sec 10 x 360 sec 10 x 560 sec 10 x 700 sec 10 x 1000 sec i pps1 i pps2 i pps3 i pps4 i pps5 i pps6 i pps7 150 150 90 75 50 75 50 250 250 150 125 100 100 80 500 400 200 150 150 200 100 a(pk) 1. allow cooling before testing second polarity. 2. measured under pulse conditions to reduce heating. 3. nominal values may not represent the maximum capability of a device. capacitance characteristics symbol max unit a b c (f=1.0 mhz, 1.0 v rms , 2 vdc bias) (c o apx 45% @ 50 v) np0640sxmct3g np0720sxmct3g np0900sxmct3g np1100sxmct3g np1300sxmct3g np1500sxmct3g np1800sxmct3g np2100sxmct3g np2300sxmct3g np2600sxmct3g np3100sxmct3g np3500sxmct3g c o 23 23 23 23 23 23 23 23 23 23 23 23 29 29 29 29 29 29 29 29 29 29 29 29 33 33 33 33 33 33 33 33 33 33 33 33 pf maximum ratings (t a = 25 c unless otherwise noted) symbol rating value unit v drm repetitive peak off ? state voltage: rated maximum (peak) continuous voltage that may be applied in the off ? state conditions including all dc and repetitive alternating voltage components. (stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability.) np0640sxmct3g 58 v np0720sxmct3g 65 np0900sxmct3g 75 np1100sxmct3g 90 np1300sxmct3g 120 np1500sxmct3g 140 np1800sxmct3g 170 np2100sxmct3g 180 np2300sxmct3g 190 np2600sxmct3g 220 np3100sxmct3g 275 np3500sxmct3g 320
npmc series http://onsemi.com 3 electrical characteristics table (t a = 25 c unless otherwise noted) symbol rating min typ max unit v (bo) breakover voltage: the maximum voltage across the device in or at the breakdown region. (note 4) vdc = 1000 v, dv/dt = 100 v/ s np0640sxmct3g 77 v np0720sxmct3g 88 np0900sxmct3g 98 np1100sxmct3g 130 np1300sxmct3g 160 np1500sxmct3g 180 np1800sxmct3g 220 np2100sxmct3g 240 np2300sxmct3g 260 np2600sxmct3g 300 np3100sxmct3g 350 np3500sxmct3g 400 i (bo) breakover current: the instantaneous current flowing at the breakover voltage. 800 ma i h holding current: minimum current required to maintain the device in the on ? state. (notes 5, 6) 150 ma i drm off ? state current: the dc value of current that results from the applica- tion of the off ? state voltage v d = 50 v 2 a v d = v drm 5 v t on ? state voltage: the voltage across the device in the on ? state condition. i t = 2.2 a (pk), pw = 300 s, dc = 2% 4 v di/dt critical rate of rise of on ? state current: rated value of the rate of rise of current which the device can withstand without damage. 500 a/ s 4. electrical parameters are based on pulsed test methods. 5. measured under pulsed conditions to reduce heating 6. allow cooling before testing second polarity. thermal characteristics symbol rating value unit t stg storage temperature range ? 65 to +150 c t j junction temperature ? 40 to +150 c r 0ja thermal resistance: junction ? to ? ambient per eia/jesd51 ? 3, pcb = fr4 3?x4.5?x0.06? fan out in a 3x3 inch pattern, 2 oz copper track. 90 c/w
npmc series http://onsemi.com 4 electrical parameter/ratings definitions symbol parameter v drm repetitive peak off ? state voltage v (bo) breakover voltage i drm off ? state current i (bo) breakover current i h holding current v t on ? state voltage i t on ? state current i tsm nonrepetitive peak on ? state current i pps nonrepetitive peak impulse current v d off ? state voltage i d off ? state current figure 1. voltage current characteristics of tspd v t i pps i tsm i t i d i h ? voltage +voltage ? i +i i (bo) i drm v d v (bo) v drm off ? state region on ? state region time ( s) 0 50 0 ipp ? peak pulse current ? %ipp 100 t r = rise time to peak value t f = decay time to half value t r t f peak value half value 1 10 100 0.1 1 10 100 1000 figure 2. nonrepetitive on ? state current vs. time (i tsm ) figure 3. nonrepetitive on ? state impulse vs. waveform (i pps ) current duration (s) peak on ? state current figure 4. capacitance vs. off ? state voltage voltage (v) capacitance (pf) 40 35 30 25 20 15 10 5 0 0102030 60 50 40 +125 c ? 40 to +25 c
npmc series http://onsemi.com 5 detailed operating description the tspd or t hyristor s urge p rotection d evice are specialized silicon based overvoltage protectors, used to protect sensitive electronic circuits from damaging overvoltage transient surges caused by induced lightning and powercross conditions. the tspd protects by switching to a low on state voltage when the specified protection voltage is exceeded. this is known as a ?crowbar? effect. when an overvoltage occurs, the crowbar device changes from a high ? impedance to a low ? impedance state. this low ? impedance state then of fers a path to ground, shunting unwanted surges away from the sensitive circuits. this crowbar action defines the tspd?s two states of functionality: open circuit and short circuit. open circuit ? the tspd must remain transparent during normal circuit operation. the device looks like an open across the two wire line. short circuit ? when a transient surge fault exceeds the tspd protection voltage threshold, the devices switches on, and shorts the transient to ground, safely protecting the circuit. figure 5. normal and fault conditions protected equipment + ? + ? v (op) i (op) tspd normal circuit operation protected equipment + ? + ? v (fault) i (fault) tspd operation during a fault i (fault) ? tspd looks like an open ? circuit operates normally ? fault voltage greater than v bo occurs ? tspd shorts fault to ground ? after short duration events the o/v switches back to an open condition ? worst case (fail/safe) ? o/v permanent short ? equipment protected the electrical characteristics of the tspd help the user to define the protection threshold for the circuit. during the open circuit condition the device must remain transparent; this is defined by the i drm . the i drm should be as low as possible. the typical value is less than 5 a. the circuit operating voltage and protection voltage must be understood and considered during circuit design. the v (bo) is the guaranteed maximum voltage that the protected circuit will see, this is also known as the protection voltage. the v drm is the guaranteed maximum voltage that will keep the tspd in its normal open circuit state. the tspd v (bo) is typically a 20 ? 30% higher than the v drm . based on these characteristics it is critical to choose devices which have a v drm higher than the normal circuit operating voltage, and a v (bo) which is less than the failure threshold of the protected equipment circuit. a low on ? state voltage v t allows the tspd to conduct large amounts of surge current (500 a) in a small package size. once a transient surge has passed and the operating voltage and currents have dropped to their normal level the tspd changes back to its open circuit state. normal system operating voltage equipment failure threshold time transient surge tspd protection (short) figure 6. protection during a transient surge tspd transparent (open) tspd transparent (open) volts tspd protection voltage upper limit tspd?s are useful in helping designers meet safety and regulatory standards in telecom equipment including gr ? 1089 ? core, itu ? k.20, itu ? k.21, itu ? k.45, fcc part 68, ul1950, and en 60950. on semiconductor of fers a full range of these products in the np series product line. device selection when selecting a tspd use the following key selection parameters. off ? state voltage v drm choose a tspd that has an off ? state v oltage greater than the normal system operating voltage. the protector should not operate under these conditions: example: vbat = 48 vmax vring = 150 vrms = 150*1.414 = 212 v peak v drm should be greater than the peak value of these two components: v drm > 212 + 48 = 260 v drm breakover voltage v (bo) verify that the tspd breakover voltage is a value less than the peak voltage rating of the circuit it is protecting. example: relay breakdown voltage, slic maximum voltage, or coupling capacitor maximum rated voltage. peak pulse current ipps choose a peak pulse current value which will exceed the anticipated surge currents in testing. in some cases the 100 a ?c? series device may be needed when little or no series resistance is used. when a series current limiter is used in the circuit a lower current level of ?a? or ?b? may be used. to determine the peak current divide the maximum surge current by the series resistance. hold current (i h ) the hold current must be greater than the maximum system generated current. if it is not then the tspd will remain in a shorted condition, even after a transient event has passed.
npmc series http://onsemi.com 6 typical applications figure 7. adsl tip ring voice np3100scmc np3100scmc dsl figure 8. t1/e1 power t x np0640scmc np1800scmc np1800scmc np0640scmc np0640scmc np1800scmc np1800scmc np0640scmc r x
npmc series http://onsemi.com 7 package dimensions a s d b j p k c h notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. d dimension shall be measured within dimension p. dim min max min max millimeters inches a 0.160 0.180 4.06 4.57 b 0.130 0.150 3.30 3.81 c 0.075 0.095 1.90 2.41 d 0.077 0.083 1.96 2.11 h 0.0020 0.0060 0.051 0.152 j 0.006 0.012 0.15 0.30 k 0.030 0.050 0.76 1.27 p 0.020 ref 0.51 ref s 0.205 0.220 5.21 5.59 smb case 403c ? 01 issue a *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* mm inches scale 8:1 2.743 0.108 2.159 0.085 2.261 0.089 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 np0640samc/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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